IGO-based 2-line 2T0C #DRAM enables multi-bit #storage with refresh times up to 15,000× longer than Si 1T1C DRAM.

🔗 In #IJEM: doi.org/10.1088/2631-7990/add7a3

#InGaO #MemoryDevices #3DMemory #Nonvolatile #OxideSemiconductors #SemiconductorTech #μFE #PBTS #ExtremeManufacturing