In-situ post-doping plasma process during atomic layer deposition of Al-doped TiO2 for sub-nanometer lattice ordering and defect annihilation
An innovative in-situ plasma process optimizes Al-doped TiO2 during atomic layer deposition through sub-nanometer lattice ordering and defect annihilation, significantly improving the electrical and structural properties of thin films.
#IJEM #OpenAccess: doi.org/10.1088/2631...
#PlasmaProcessing