[Progress Review]
Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes
2025 Jpn. J. Appl. Phys. 64 010801

iopscience.iop.org/article/10.3...

#JJAP
#physics
#SiC
#MOS
#interface
#nitridation

[OPEN ACCESS]
Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing
2023 16 074004

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#SiC
#MOS
#plasma
#nitridation
#SiO2
#CO2

[OPEN ACCESS]
Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing
2023 16 074004

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#SiC
#MOS
#plasma
#nitridation
#SiO2
#CO2