Device-Circuit Co-Design of Variation-Resilient Read/Write Drivers for Antiferromagnetic Tunnel Junction Memories

Co-designed STSA+, PD EQ+, and WD_WRITE circuits enable reliable picosecond AFMTJ switching with sub-10⁻⁶ BER/WER. AFMTJs achieve 6.9× faster writes and ~5× lower energy vs. MTJ at 0.7V, robust under 3D-stacked PVT variation.

#Spintronics #AFMTJ #MRAM