New Gallium-doped Transistor May Surpass Silicon

Transistors are among the most important inventions in modern technology. They power everything from smartphones to s...

#GalliumTransistor #GateAllAround #FutureComputing #4TechViews

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Channel-last gate-all-around nanosheet oxide semiconductor transistors
Alberto Salleo, Amy Siobhan McKeown-Green et al.
Paper
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Rapidus Achieves Successful Prototyping of 2nm Gate-All-Around (GAA) Transistors Rapidus Corporation has recently announced a pivotal achievement: the successful prototyping of 2nm Gate-All-Around (GAA) transistors at its Innovative Integration for Manufacturing (IIM-1) foundry (Figure 1). This milestone is particularly significant as the prototype wafers have also begun to exhibit their electrical characteristics, validating the fundamental functionality of these advanced semiconductor structures. The company has maintained a swift development timeline, aiming for mass production by 2027.

Rapidus Achieves Successful Prototyping of #2nm #GateAllAround (#GAA) #Transistors

NVIDIA CEO Says GAA Could Have 20 Percent Better Performance Than FinFET NVIDIA's Jensen Huang said during a Q&A session at GTC 2025 that he expects GAA to be 20% better than the current FinFET technology.

NVIDIA CEO Says GAA Could Have 20 Percent Better Performance Than FinFET #feynman #gaa #gateallaround #hardware #semiconductorchips