CEA-Leti and ST Advance 3D-Integrated RF Silicon Platform CEA-Leti and STMicroelectronics unveiled new findings at IEDM 2025 about technologies for an advanced, adaptable RF silicon platform capable of combining top-tier active and passive components used in RF and optical front-end modules. Their work describes how silicon-germanium (SiGe) heterojunction bipolar transistors, RF SOI switches, and high-quality passive elements can be co-fabricated on a single wafer through 3D sequential integration, an approach that supports highly consolidated architectures with minimal parasitics and positions the technology as a compelling, cost-sensitive solution for future wireless and wired communication systems.

CEA-Leti and ST unveil new findings at #IEDM2025 that advance 3D-integrated silicon #RF front-end development for dense #wireless networks. #FEMs