[2025 OPEN ACCESS]
Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor
2025 Appl. Phys. Express 18 044001

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#HEMTs
#GaN
#InAlGaN
#metalorganic
#vapor
#phase
#epitaxy
#gate