[2025 OPEN ACCESS]
ScAlN/GaN-on-Si (111) HEMTs for RF applications
2025 Appl. Phys. Express 18 046501

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#OpenAccess
#Physics
#ScAlN
#GaN
#Silicon
#MBE
#HEMTs

[2025 OPEN ACCESS]
Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor
2025 Appl. Phys. Express 18 044001

iopscience.iop.org/article/10.3...

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#OpenAccess
#Physics
#HEMTs
#GaN
#InAlGaN
#metalorganic
#vapor
#phase
#epitaxy
#gate

[Latest Article: 2025 Open Access]
High-frequency and high-power AlGaN/GaN MOSHEMTs fabricated using atomic layer etching for gate recess
2025 Appl. Phys. Express 18 126501

iopscience.iop.org/article/10.3...

#APEX
#OpenAccess
#Physics
#GaN
#HEMTs
#Si
#etching
#recess
#voltage
#measurements
#wave

Advancing Autonomous Driving with High-Power VCSEL Arrays and GaN HEMTs To meet the power and speed requirements for driving multichannel VCSEL arrays, GaN HEMTs offer a promising solution.

To meet the power and speed requirements for driving multichannel #VCSEL arrays, #GaN #HEMTs offer a promising solution.

Optimizing PCB Design for GaN HEMT-Based Power Converters This article, based on a presentation at APEC 2025, outlines PCB design recommendations tailored for converters incorporating GaN HEMTs.

This article, based on a presentation at #APEC 2025, outlines #PCB design recommendations tailored for converters incorporating #GaN #HEMTs.