Retinomorphic devices beyond silicon for dynamic machine vision Retinomorphic devices beyond silicon for dynamic machine vision, Xia, Yuxin, Babu, Roshni Satheesh, Vishwanath, Sujaya Kumar, Georgiadou, Dimitra G

Read our new review article "Retinomorphic devices beyond silicon for dynamic machine vision" open access in #Neuromorphic #Computing & #Engineering
doi.org/10.1088/2634...
via @ioppublishing.bsky.social @unisouthampton.bsky.social @ukri.org #FLF #perovskite #metaloxide #organic #2D #TMD #Materials

Rate-controlled cycle etching of GaN by cycle exposure to BCl3 and F2-added Ar plasma at a substrate temperature of 400 °C Cycle etching of GaN with high etching rate controllability was achieved by cycle exposure to BCl3 gas and F2-added Ar plasma at an ion energy of 23 eV and a su

Researchers in Japan have developed a cycle etching method for GaN to fabricate #metaloxide #semiconductor HEMTs. By alternating exposure to BCl3 gas and F2-added Ar #plasma, they achieved precise etching control with minimal damage. #JVSTB @avs-members.bsky.social
doi.org/10.1116/5.02...

radiochan status: I spent 2 hours earlier dubbing off #shingodzilla to #vhs

#svhs on a #dvhs tape for muh #METALOXIDE

started stopped a couple times to fix display issues originating from #mpchd