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[2024 OPEN ACCESS]
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
2024 Appl. Phys. Express 17 014005
iopscience.iop.org/article/10.3...
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[Open Access]
Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing
2025 Appl. Phys. Express 18 091002
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OPEN ACCESS
Temperature dependence of barrier height in a Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on the thermionic emission-diffusion model
2025 Appl. Phys. Express 18 074001
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[2025 OPEN ACCESS]
Ultrashort gain-switched pulse trains from laser diodes characterized by a single-shot up-conversion time microscope
2025 Appl. Phys. Express 18 072002
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[2024 OPEN ACCESS]
Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage
2024 Appl. Phys. Express 17 124001
iopscience.iop.org/article/10.3...
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[Spotlights]
Demonstration of UV-A stimulated emission from optical pumping with a nano-porous cladding layer
2024 Appl. Phys. Express 17 122001
iopscience.iop.org/article/10.3...
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iopscience.iop.org/journal/1882...
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[APEX REVIEW : Open Access]
Fundamentals and recent advances of terahertz resonant tunneling diodes
2024 17 070101
Safumi Suzuki, Masahiro Asada, Tokyo Institute of Technology
iopscience.iop.org/article/10.3...
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[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
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[Spotlight 2024 : OPEN ACCESS]
High-current, high-voltage AlN Schottky barrier diodes
2024 Appl. Phys. Express 17 101002
iopscience.iop.org/article/10.3...
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iopscience.iop.org/journal/1882...
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