[2024 OPEN ACCESS]
Temperature-dependent Raman-active phonon modes and electron−phonon coupling in β-Ga2O3 microwire
2024 Appl. Phys. Express 17 012004
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Temperature
#Raman
#phonon
#Ga2O3
#microwire
[2024 OPEN ACCESS]
Lattice thermal conductivity of β-, α- and κ- Ga2O3: a first-principles computational study
2024 Appl. Phys. Express 17 011001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#thermal
#conductivity
#Ga2O3
#Firstprinciples
[2024 OPEN ACCESS]
Franz–Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage
2024 Appl. Phys. Express 17 124001
iopscience.iop.org/article/10.3...
#APEX
#Physics
#OpenAccess
#Ga2O3
#FranzKeldysh
#Photocurrent
#photoemission
#Schottky
#diode
[Open Access]
Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
2025 Appl. Phys. Express 18 055503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Ga2O3
#vapor
#phase
#epitaxy
[APEX REVIEW : Open Access]
Prospects for β-Ga2O3: now and into the future
2024 Appl. Phys. Express 17 090101
Kohei Sasaki, Novel Crystal Technology
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Review
#Ga2O3
#gallium
#oxide
[2025 OPEN ACCESS]
Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen
2025 Appl. Phys. Express 18 041003
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Ga2O3
#enhancement
#vertical
#MOSFET
#ion
#implantation
[2024 OPEN ACCESS]
Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric field
2024 Appl. Phys. Express 17 081004
iopscience.iop.org/article/10.3...
#APEX
#Physics
#Openaccess
#firstprinciples
#Ga2O3
#biaxial
#strain
[APEX REVIEW : Open Access]
Prospects for β-Ga2O3: now and into the future
2024 Appl. Phys. Express 17 090101
Kohei Sasaki, Novel Crystal Technology
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Review
#Ga2O3
#gallium
#oxide
[Latest Article: Open Access]
Fabrication of β-Ga2O3/air-gap structures on (010) β-Ga2O3 by wet etching in tetramethylammonium hydroxide (TMAH)
2025 Appl. Phys. Express 18 116501
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Ga2O3
#TMAH
#cantilever
#bridge
#etching
#MEMS
[OPEN ACCESS]
High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact
2024 Appl. Phys. Express 17 066501
iopscience.iop.org/article/10.3...
#APEX
#Physics
#Openaccess
#Ga2O3
#heterojunction
#Schottky
#diode
[APEX REVIEW : Open Access]
Prospects for β-Ga2O3: now and into the future
2024 Appl. Phys. Express 17 090101
Kohei Sasaki, Novel Crystal Technology
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Review
#Ga2O3
#gallium
#oxide
[OPEN ACCESS]
Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
2023 Appl. Phys. Express 16 105503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Heteroepitaxial
#Ga2O3
#diamond
#magnetron
#bandgap
[2024 OPEN ACCESS]
Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown
2024 Appl. Phys. Express 17 046501
iopscience.iop.org/article/10.3...
#APEX
#Physics
#OpenAccess
#Ga2O3
#Schottky
#diode
#heterojunction
[SPOTLIGHTS : OPEN ACCESS]
High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
2023 16 095504
iopscience.iop.org/article/10.3...
Spotlights
iopscience.iop.org/journal/1882...
#APEX
#OpenAccess
#Physics
#Spotlights
#Ga2O3
[Highlights of 2023]
Anisotropic electrical properties of NiOx/β-Ga2O3p-n heterojunctions on (overline 201), (001), and (010) crystal orientations
2023 16 094002
iopscience.iop.org/article/10.3...
Highlights
iopscience.iop.org/journal/1882...
#APEX
#Physics
#Ga2O3
#heterojunction
#crystal
[Latest Article: Spotlight]
A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
2025 Appl. Phys. Express 18 106502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#spotlight
#Ga2O3
#transistor
#breakdown
#voltage
[APEX REVIEW : Open Access]
Prospects for β-Ga2O3: now and into the future
2024 Appl. Phys. Express 17 090101
Kohei Sasaki, Novel Crystal Technology
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Review
#Ga2O3
#gallium
#oxide
[OPEN ACCESS]
Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates
2023 Appl. Phys. Express 16 081004
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#CVD
#Ga2O3
#MESFET
#Homoepitaxial
[OPEN ACCESS]
Oxygen vacancies in α-(AlxGa1−x)2O3 alloys: a first-principles study
2023 Appl. Phys. Express 16 061002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Oxygen
#Ga2O3
#firstprinciple
[APEX REVIEW : Open Access]
Prospects for β-Ga2O3: now and into the future
2024 Appl. Phys. Express 17 090101
Kohei Sasaki, Novel Crystal Technology
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Review
#Ga2O3
#gallium
#oxide
[OPEN ACCESS]
Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer
2023 Appl. Phys. Express 16 044002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Ga2O3
#MOSFET
#Si
#accumulation
[Spotlights 2023]
Investigation of high speed β-Ga2O3 growth by solid-source trihalide vapor phase epitaxy
2023 Jpn. J. Appl. Phys. 62 SF1021
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Spotlights
#Crystal
#Ga2O3
#Solid
#source
#HVPE
#THVPE
[Spotlights 2023]
Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy
2023 Jpn. J. Appl. Phys. 62 SF1019
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Spotlights
#Ga2O3
#MOVPE
#Triethylgallium
#mass
#spectrometry
[Spotlights 2023]
Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy
2023 Jpn. J. Appl. Phys. 62 SF1013
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Spotlights
#Ga2O3
#MOCATAXY
#αGa2O3
#catalysis
#molecular
#beam
#epitaxy
[2023 Open Access]
Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
2023 Jpn. J. Appl. Phys. 62 SF1010
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Ga2O3
#transistor
#power
#electronics
#FinFET
[2023 Open Access]
Ni/Au contacts to corundum α-Ga2O3
2023 Jpn. J. Appl. Phys. 62 SF1008
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Ga2O3
#Corundum
#Schottky
#Transmission
#electron
#microscopy
[Spotlights 2023]
Two-inch Fe-doped β-Ga2O3 (010) substrates prepared using vertical Bridgman method
2023 Jpn. J. Appl. Phys. 62 SF1006
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Spotlights
#Ga2O3
#Bulk
#crystal
#Vertical
#Bridgman
[PROGRESS REVIEW 2023 Open Access]
Ga vacancies in β-Ga2O3: split or not?
2023 Jpn. J. Appl. Phys. 62 SF0802
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Ga2O3
#positron
#annihilation
#vacancy
#defects
[PROGRESS REVIEW 2023 Open Access]
Recent progress of Ga2O3 power technology: large-area devices, packaging and applications
2023 Jpn. J. Appl. Phys. 62 SF0801
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Ga2O3
#electronics
#semiconductor
#converter
#thermal
#ruggedness
[OPEN ACCESS]
Heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
2023 16 105503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Heteroepitaxial
#Ga2O3
#diamond
#magnetron
#bandgap
#semiconductor
