[Review]
Development of GaN trench MOSFET process technologies
2026 Appl. Phys. Express 19 010103

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APEX-NEXT (Noteworthy Excellent Topics)
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#APEX
#OA
#オープンアクセス
#Review
#Physics
#GaN
#MOSFET
#MOVPE
#etching
#ion
#oxide

[2024 OPEN ACCESS]
Red light-emitting diode with full InGaN structure on a ScAlMgO4 substrate
2024 Appl. Phys. Express 17 111001

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#APEX
#Physics
#OpenAccess
#InGaN
#ScAlMgO4
#LEDs
#MOVPE
#gallium
#nitride

[Spotlights 2023]
Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy
2023 Jpn. J. Appl. Phys. 62 SF1019

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#JJAP
#physics
#Spotlights
#Ga2O3
#MOVPE
#Triethylgallium
#mass
#spectrometry

[Spotlights 2023 Open Access]
High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression
2023 Jpn. J. Appl. Phys. 62 SF1004

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#JJAP
#physics
#Openaccess
#MOVPE
#Gallium
#oxide
#Parasitic
#particle

[Open Access]
(10–13)-oriented semipolar GaN growth on (10–10) m-plane ScAlMgO4 substrate
2024 Jpn. J. Appl. Phys. 63 101001

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#JJAP
#physics
#Openaccess
#ScAlMgO4
#GaN
#MOVPE
#semipolar