Led by Qiu Chenguang and Peng Lianmao, the team introduced a nanogate MoS₂ FeFET with a physical gate length of 1 nm, operating at a logic-compatible voltage of 0.6 V.

The technology is expected to enable ultra-low power AI inference, edge devices, and IoT applications.

#Semiconductors #FeFET

Tackling #ferroelectric scaling dilemmas for AI-era computing!

A #PKUResearch team reports wafer-scale, uniform, ultrathin van der Waals ferroelectric oxide Bi₂SeO₅—retaining robust ferroelectricity down to monolayer thickness on a parent 2D semiconductor Bi₂O₂Se substrate.

#FeFET @science.org

[Progress Review]
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802

iopscience.iop.org/article/10.3...

#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET

Samsung Unveils FeFET NAND Chip, Cutting Power Use by 96% Samsung researchers have unveiled a new memory chip architecture that could drastically cut power consumption for data centers and artificial intelligence

Samsung Unveils FeFET NAND Chip, Cutting Power Use by 96%

#energyefficiency #FeFET #NAND #Samsung #storagetechnology

[Spotlights 2023]
Comprehensive analysis on error-robustness of FeFET computation-in-memory for hyperdimensional computing
2023 Jpn. J. Appl. Phys. 62 SC1053

iopscience.iop.org/article/10.3...

#JJAP
#physics
#hyperdimensional
#computing
#FeFET
#Computation
#Memory
#robustness

[Progress Review]
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802

iopscience.iop.org/article/10.3...

#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET