次世代パワー半導体の実証成功: r-GeO₂ MOSFETの新たな時代へ #ゲルマニウム #MOSFET #r-GeO₂
株式会社Patentixがデプレッション型r-GeO₂ MOSFETのトランジスタ動作実証に成功。次世代パワー半導体材料の可能性を探る注目の成果を紹介します。
Low-Voltage MOSFET Market Gains Momentum in Modern Electronics
Increasing adoption of compact and energy-efficient semiconductor devices supports market growth.
Source - theinsightspartners.wordpress.com/2026/03/23/l...
#MOSFET #LowVoltageMOSFETMarket #SemiconductorMarket #TechIndustry
[Open Access]
High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs
2024 Jpn. J. Appl. Phys. 63 071002
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#CMOS
#MOSFET
#hydrogen
#annealing
#band
[Open Access]
Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures
2025 Appl. Phys. Express 18 081002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#SiC
#SiO2
#density
#MOS
#MOSFET
#hydrogen
#annealing
#passivation
Reverse Polarity Protection Circuit Using MOSFET circuitdigest.com/electronic-c...
In this tutorial, we walk through how a MOSFET reverse polarity protection circuit works and how you can easily add it to your designs.
#mosfet #reversepolarity #tutorial #basicelectroniccircuit #circuitdigest
univold.com/nexperia-mosfets-and-general-purpose-bjts/ The Future Challenges Facing Nexperia MOSFETs and General-Purpose BJTs
#Nexperia #MOSFET #BJT #PowerElectronics
#Semiconductor
#DiscreteComponents
#WideBandgap
#SiC
#GaN
#AutomotiveElectronics
#ElectricVehicles
#EVTechnology
[2025 OPEN ACCESS]
Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface
2025 Appl. Phys. Express 18 071002
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Hole
#trap
#GaN
#MOSFET
#Boron
#doping
[2024 OPEN ACCESS]
Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs
2024 Appl. Phys. Express 17 124002
iopscience.iop.org/article/10.3...
#APEX
#Physics
#OpenAccess
#SiC
#MOSFET
#poly
#Si
#shorting
MOSFET Market Emerging Markets and New Opportunities in the Semiconductor Sector, 2026 www.marketresearchfuture.com/reports/mosf...
#MOSFET #PowerElectronics #Semiconductors #SmartDevices #EmergingTech
[Review]
Development of GaN trench MOSFET process technologies
2026 Appl. Phys. Express 19 010103
iopscience.iop.org/article/10.3...
APEX-NEXT (Noteworthy Excellent Topics)
iopscience.iop.org/collections/...
#APEX
#OA
#オープンアクセス
#Review
#Physics
#GaN
#MOSFET
#MOVPE
#etching
#ion
#oxide
MOSFET Market Size, Share Report and Industry Trends 2035 www.marketresearchfuture.com/reports/mosf...
#MOSFET #PowerSemiconductors #ElectronicDevices #SemiconductorTech #PowerElectronics
[2025 OPEN ACCESS]
Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen
2025 Appl. Phys. Express 18 041003
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Ga2O3
#enhancement
#vertical
#MOSFET
#ion
#implantation
[2024 OPEN ACCESS]
High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs
2024 Appl. Phys. Express 17 101003
iopscience.iop.org/article/10.3...
#APEX
#Physics
#OpenAccess
#GaN
#trench
#MOSFET
#hafnium
#dioxide
#semiconductor
#power
#dielectrics
[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET