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[2025 OPEN ACCESS]
High field performance of Si-doped n-AlN layers grown using pulsed MOCVD
2025 Appl. Phys. Express 18 065501

iopscience.iop.org/article/10.3...

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[2025 OPEN ACCESS]
Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor
2025 Appl. Phys. Express 18 044001

iopscience.iop.org/article/10.3...

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#Physics
#HEMTs
#GaN
#InAlGaN
#metalorganic
#vapor
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